Electrostatic coupling-driven dielectric enhancement of PZT/BTO multilayer thin films

In this study, PbZr0.52Ti0.48O3/BaTiO3 (PZT/BTO) multilayers with varying layer fractions were deposited on Pt/Ti/SiO2/Si substrates by sol–gel process. The films characterized X-ray diffraction and scanning electron microscopy (SEM). result shows that there exists a dielectric enhancement when the BTO fraction x is around 0.5, at fraction, constant of PZT/BTO 590 100 kHz, which far more than monolithic PZT or (478 284, respectively). thermodynamic analysis measured close to simulation values closes 0.5; otherwise it fit caculated series connection. indicates internal field resulting from polarization mismatch between two ferroelectric layers contributes heterogeneous thin films.